ORALS
SESSION: ManufacturingMonPM3-R4
Metal Forming / Metal Removal Processing / Non-Conventional Techniques – I | Mamalis International Symposium on Advanced Manufacturing of Advanced Materials and Structures with Sustainable Industrial Applications |
| Mon Nov, 5 2018 / Room: Sao Conrado (50/2nd) | |
| Session Chairs: Raul S. Turmanidze; Session Monitor: TBA |
17:40: [ManufacturingMonPM313]
Synthesis of ZnSe Films by Electrochemical Deposition for Assembly of Photo-transforming Heterostructures Dmitri S.
Sofronov
1 ;
Athanasios G.
Mamalis2 ; Vadym V.
Starikov
3 ; E.m.
Sofronova
1 ; E.a.
Vaksler
1 ; P.v.
Mateychenko
1 ; Sergiy N.
Lavrynenko
4 ;
1SSI "Institute for Single Crystals" of NAS of Ukraine, Kharkiv, Ukraine;
2PC-NAE, Demokritos National Center for Scientific Research, Athens, Greece;
3National Technical University - Kharkov Polytechnic Institute, Kharkiv, Ukraine;
4Kharkov Polytechnic Institute, Kharkov, Ukraine;
Paper Id: 170
[Abstract] The zinc selenide films were synthesized using an electrochemical method in alkaline electrolyte. The influence of deposition options (zinc ions concentration, cathodic current density and electrolysis duration) on ZnSe films formation is discussed. It is shown that the increase of film thickness and its porosity is observed at increase of current density and zinc ions concentration in electrolyte. The most compact films are formed when the zinc concentration in the electrolyte is less than 0.05 M and the current density is not higher than 35 mA/cm<sup>2</sup>. The obtained ZnSe film had p-type conductivity and a resistivity of 10<sup>5</sup>-10<sup>6</sup> Ohm·m. It was synthesized heterostructure ZnS/ZnSe/Ni including the p-n transition. The parameters of the diode heterostructure were determined by the dark IV-characteristic.
