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DEVELOPMENT OF VIABLE THERMOELECTRIC DEVICES OF NOVEL MATERIALS
Takao Mori1
1National Institute for Materials Science (NIMS), Tsukuba, Japan

PAPER: 284/SolidStateChemistry/Keynote (Oral) OS
SCHEDULED: 14:00/Mon. 21 Oct. 2024/Ariadni A

ABSTRACT:

Development of thermoelectric (TE) materials & devices is important, for energy saving via waste heat power generation and IoT power sources [1]. There are a variety of device forms which can be envisioned to be useful. I will present several high-performance materials systems we have been developing such as Mg3Sb2-type materials, skutterudites, Heusler alloys, magnetic chalcogenides, etc., and mainly on the development of various TE modules. An initial realistic 8 pair bulk module of our doped Mg-Sb materials exhibited an efficiency of 7.3%@320oC, with estimated efficiency from the actual materials being ~11%, and a variant exhibited high performance room temperature power generation and cooling [2]. Recently, a modified single element device of Mg3Sb2 was able to achieve a TE efficiency ~12% [3]. Design and construction of two different design thin film TEG devices [4] and hybrid flexible TEGs will also be presented. It is also critical to have accurate evaluation of TEGs and we have recently laid out some best practices thereof [5].

REFERENCES:
[1] Science 321, 1457 (2008), JOM, 68, 2673-2679 (2016), Sci. Tech. Adv. Mater. 19, 836 (2018), MRS Bulletin, 43, 176 (2018).
[2] Joule, 5, 1196-1208 (2021), Nature Commun., 13, 1120 (2022).
[3] Advanced Energy Materials, 13, 2301667 (2023). Front Cover Article
[4] Materials Today Energy, 28, 101075 (2022), Magnetics Jpn., 16, 291-298 (2021), Materials Today Physics, doi: 10.1016/j.mtphys.2024.101452
[5] Joule, 553–562 (2024).