2022-Sustainable Industrial Processing Summit
SIPS2022 Volume 18 Intl. Symp on Advanced Materials, Polymers, Composite, Nanomaterials, Nanotechnologies and Manufacturing
| Editors: | F. Kongoli, F. Marquis, N. Chikhradze, T. Prikhna, M. De Campos, S. Lewis, S. Miller, S. Thomas. |
| Publisher: | Flogen Star OUTREACH |
| Publication Year: | 2022 |
| Pages: | 290 pages |
| ISBN: | 978-1-989820-68-1(CD) |
| ISSN: | 2291-1227 (Metals and Materials Processing in a Clean Environment Series) |
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Hydrogen sensing characteristics of 2-dimensional β phase Ga2O3 based field effect transistor for hydrogen sensor application
Soohwan Jang1; Mankyung Kim1; Yukyung Kim1; Kwang Hyeon Baik2;1DANKOOK UNIVERSITY, Yongin-si, South Korea; 2HONGIK UNIVERSITY, Jochiwon, South Korea;
Type of Paper: Regular
Id Paper: 60
Topic: 43
Abstract:
There are great interest on hydrogen as an environmentally friendly sustainable energy source and carrier for automotive and fuel cell applications as well as in many industrial processes. Hydrogen gas is colorless, odorless, and extremely reactive with oxygen, and has very low ignition energy. Therefore, hydrogen gas sensing systems are essential in various hydrogen related applications including water splitting, hydrogen storage, and fuel cell vehicle. β phase Ga2O3 (β-Ga2O3) has recently gained a lot of interest for applications in high power devices, solar-blind photodetectors, and gas sensors [1]. The interest stems from its intrinsic material properties, such as wide bandgap nature of 4.9 eV and high breakdown electric field of 8 MV cm−1, leading to making its devices more efficient with small size dimensions for high power device and harsh environmental sensor [1-3]. The wide bandgap nature also enables Ga2O3 based electronic devices to operate at high temperatures due to its low intrinsic carrier concentration. Among the various polymorphs of Ga2O3, β-Ga2O3 is the most stable crystal structure over the whole temperature range up to its high melting temperature of 1700°C [1]. The other polymorphs are metastable and they transform into β-Ga2O3 at temperatures above 750- 900°C [1,2]. In this study, the fabrication of 2 dimensional β-Ga2O3 flake base field effect transistor and its hydrogen sensing characteristics for hydrogen sensor application will be discussed.
Keywords:
Hydrogen production; Nanomaterials; New and advanced materials; New and advanced technology;References:
1. S. Jung, S. Jang, K.Baik, Ga2O3-based gas sensors in Gallium Oxide Technology, Devices, and Applications, Elsevier, 2019 2. S. Jang, S. Jung, J. Kim, F. Ren, S. J. Pearton, K.Baik, ECS J. Solid State Sci. Technol. 7, Q3180 (2018) 3. S. Jang, S. Jung, K. Beers, J. Yang, F. Ren, A. Kuramata, S. J. Pearton, K. H. Baik, J. Alloy. Comp. 731, 118 (2018)