Gurtej Sandhu

Short Bio:

Gurtej Sandhu is Senior Fellow and Vice President at Micron Technology. In his current role, he is responsible for Micron’s end-to-end (Si-to-Package) R&D technology roadmaps. The scope includes driving cross-functional alignment across various departments and business units to proactively identify technology gaps and managing the engineering organization to resource and execute on developing innovative technology solutions for future memory scaling. Dr. Sandhu’s responsibilities include leading several internal project teams worldwide and managing interactions with research consortia around the world. At Micron, Dr. Sandhu has held several engineering and management roles. He has been actively involved with a broad range of process technologies for IC processing and has pioneered several process technologies currently employed in mainstream semiconductor chip manufacturing. Dr. Sandhu received a degree in electrical engineering at the Indian Institute of Technology, New Delhi, and a Ph.D. in physics at the University of North Carolina, Chapel Hill, in 1990. He is recognized as one of the top inventors in the world. Dr. Sandhu is a Fellow of IEEE. In 2018, he received the IEEE Andrew S. Grove Award for outstanding contributions to silicon CMOS process technology that enables DRAM and NAND memory chip scaling. Gurtej Sandhu’s urge for enhancing the efficiency of technological devices has not only got him more US patents than Thomas Edison, but also a recognition for being all-time seventh most prolific inventor as measured by number of U.S. utility patents. https://www.thebetterindia.com/194656/gurtej-sandhu-indian-origin-inventor-more-patents-than-edison-inspiring/