Stresses Relaxation in the Si-SiO2 System and its Influence on the Interface Properties
Daniel
Kropman1; Viktor
Seeman2; Artur
Medvids3; Janis
Kliava4;
1TALLINN UNIVERSITY, Tallinn, Estonia; 2TARTU UNIVERSITY, Tartu, Estonia; 3RIGA TECHNIKAL UNIVERSITY, Riga, Latvia; 4, , ;
Type of Paper: Regular
Id Paper: 221
Topic: 42Abstract:
This paper presents the results of the investigation of stresses relaxation by strain, by means of EPR spectra, SEM, and samples deflection. It has been shown that stresses relaxation mechanism depends on the oxidation condition: temperature, cooling rate, oxide thickness. In the Si-SiO2-Si3N4 system, the stresses relaxation occurs due to the opposite sign of the thermal expansion coefficient of SiO2 and Si3N4 on Si. With an appropriate oxidation condition choice, compressive stresses in SiO2 and tensile stresses in Si are nearly equal and disappear on the interface.
Keywords:
Surfaces and interfaces;
References:
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Click here to access the Full TextCite this article as:
Kropman D, Seeman V, Medvids A, Kliava J. (2017).
Stresses Relaxation in the Si-SiO2 System and its Influence on the Interface Properties.
In Kongoli F, Braems I, Demange V, Dubois JM, Pech-Canul M, Patino CL, Fumio O
(Eds.), Sustainable Industrial Processing Summit
SIPS 2017 Volume 8: Surfaces and Interfaces(SISAM), Composite, Ceramic and Nanomaterials
(pp. 114-118).
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