2017-Sustainable Industrial Processing Summit
SIPS 2017 Volume 5. Marquis Intl. Symp. / New and Advanced Materials and Technologies
| Editors: | Kongoli F, Marquis F, Chikhradze N |
| Publisher: | Flogen Star OUTREACH |
| Publication Year: | 2017 |
| Pages: | 590 pages |
| ISBN: | 978-1-987820-69-0 |
| ISSN: | 2291-1227 (Metals and Materials Processing in a Clean Environment Series) |
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Low Temperature Technology Receiving Nano Scale Metal Oxides
Zurab Kushitashvili1; Amiran Bibilashvili2;1LEPL MICRO AND NANOELECTRONICS INSTITUTE, Rustavi, Georgia; 2LEPL MICRO AND NANOELECTRONICS INSTITUTE, Tbilisi, Georgia;
Type of Paper: Regular
Id Paper: 64
Topic: 43
Abstract:
Research object is to receiving thin dielectric films by using low-temperature technology. In general, field of using dielectric materials is quite diverse. Research and using such materials for different purposes and fields such as electronics, optics, renewable energy (solar cells), ceramics, medical, food and many others are of interest. Dielectric is a main component for the integrated circuit, which is responsible for the electrical isolation of the circuit elements, the active element in the field effect transistors as a gate dielectric and generally in the metal-oxide-semiconductor (MOS) structures.
Formation of dielectric films in the world happens in high temperatures (11000C). At this temperatures take place diffusion of unwanted impurities, increasing porosity, becoming worst adhesion to the substrate and etc. All of this influences badly on the parameters of nano-scale devices. Progress in the development of nanotechnologies the high temperature became unsupportive process, because reducing the size of the nanostructures it changes physical and chemical properties of the material.
In this report considered plasma anodizing process with ultra violet stimulation for receiving metal oxides. This process carries out at relatively low temperature (4000C) and distinguished as a clean, vacuum and easy process. By plasma anodizing in a 3-5 minutes can be done 50-100nm thickness oxide layers. In the experiments were used Titanium (Ti), Hafnium (Hf) and Zirconium (Zr) as a metals deposited onto silicon substrate and following oxidation by plasma anodizing. The properties of received oxides TiO2, HfO2 and ZrO2 were characterized by C-V and I-V measurement, XRD diffractometer and SEM measurements. TiO2 revealed good photocatalytic and high dielectric constant properties, HfO2 and ZrO2 good electric properties as a gate dielectric for MOS field transistors and for memristive device - memristor.