Editors: | Kongoli F, Aifantis E, Wang H, Zhu T |
Publisher: | Flogen Star OUTREACH |
Publication Year: | 2016 |
Pages: | 190 pages |
ISBN: | 978-1-987820-48-5 |
ISSN: | 2291-1227 (Metals and Materials Processing in a Clean Environment Series) |
A Buckling-based Method for Measuring the Strain-Photonic Coupling Effect of GaAs Nanoribbons
Xue Feng
AML, Department of Engineering Mechanics, Tsinghua University, Beijing 100084
Center for Mechanics and Materials, Tsinghua University, Beijing 100084
KEYWORDS: Strain-photonic coupling, optoelectronic material, bandgap, buckling, nanoribbons
ABSTRACT: The ability to continuously and reversibly tuning the bandgap and strain-photonic coupling effect in optoelectronic materials is highly desirable for fundamentally understanding the mechanism of strain engineering and its applications in semiconductor. However, optoelectronic materials (i.e. GaAs) with their natural brittleness cannot be subject to directly mechanical loading such as tension or compression. Here, we report a strategy to induce continuous strain distribution in GaAs nanoribbons by applying structural buckling. Wavy GaAs nanoribbons are fabricated by transfer printing onto pre-strained soft substrate, and then the corresponding photoluminescence are measured to investigate the strain-photonic coupling effect. The theoretical analysis shows the evolution of bandgap due to strain and is consistent with the experiments. The results demonstrate the potential application of buckling configuration to delicately measure and tune the bandgap and optoelectronic performance.