2016-Sustainable Industrial Processing Summit
SIPS 2016 Volume 7: Yang Intl. Symp. / Multiscale Material Mechanics

Editors:	Kongoli F, Aifantis E, Wang H, Zhu T
Publisher:	Flogen Star OUTREACH
Publication Year:	2016
Pages:	190 pages
ISBN:	978-1-987820-48-5
ISSN:	2291-1227 (Metals and Materials Processing in a Clean Environment Series)

CD shopping page

Absorption Layer Removed UV Flip Chip structures for high power 365 nm UV LED

Anil Kawan¹; Soon Jae Yu²; Chung Tae Kim³;
¹, Cheonan, Korea (Republic of [South] Korea); ²SUNMOON UNVERSITY, Asan-si, Korea (Republic of [South] Korea); ³KISTI, Seoul, Korea (Republic of [South] Korea);
Type of Paper: Regular
Id Paper: 194
Topic: 1

Abstract:

GaN-based 365 nm ultraviolet (UV) LEDs has various applications: curing, molding, purification, deodorization and disinfection etc. However, their usage is limited by very low output power, because of the absorption in the buffer GaN as well as thick n-type GaN layer. The GaN absorption layer (buffer GaN) removed flip chip (ARFC) along with n-type GaN thinning technique is one of the efficient ways to improve the output power of 365 nm UV LEDs. In this study, three different types of ARFC flip chip structures were fabricated to analyze the power enhancement in 365 nm UV LED. The first type comprises silicon as receptor wafer, which was bonded to epi-wafer using Au-Au bonding metal. Through-holes of 100 µm diameters were formed from Si substrate to n-GaN by using dry etching techniques, and filled with metals for the fabrication of n-electrode. Second type comprises copper plating method in which via-hole flip chip was electroplated with thick copper and third type comprises align wafer bonding method in which AlN is aligned and bonded to via-hole flip chip. All three types of structures undergo sequences of sapphire laser lift-off, buffer GaN removal and n-type GaN thinning. Here we present the detailed analysis on the physical, electrical and optical characteristics of three types of ARFCs.
* Correspondence to: sjy@sunmoon.ac.kr

Cite this article as:

Kawan A, Yu S, Kim C. Absorption Layer Removed UV Flip Chip structures for high power 365 nm UV LED. In: Kongoli F, Aifantis E, Wang H, Zhu T, editors. Sustainable Industrial Processing Summit SIPS 2016 Volume 7: Yang Intl. Symp. / Multiscale Material Mechanics. Volume 7. Montreal(Canada): FLOGEN Star Outreach. 2016. p. 109-110.