2016-Sustainable Industrial Processing Summit
SIPS 2016 Volume 2: Dubois Intl. Symp. / Complex Metallic Systems
| Editors: | Kongoli F, Kobe S, Calin M, Dong C |
| Publisher: | Flogen Star OUTREACH |
| Publication Year: | 2016 |
| Pages: | 130 pages |
| ISBN: | 978-1-987820-38-6 |
| ISSN: | 2291-1227 (Metals and Materials Processing in a Clean Environment Series) |
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Correlation between Semiconductor Properties and Local Cluster Structures of Amorphous Fe-Si Films
Xiaona Li1; Lujie Jin1; Yuehong Zheng1; Chuang Dong1;1DALIAN UNIVERSITY OF TECHNOLOGY, Dalian, China;
Type of Paper: Regular
Id Paper: 81
Topic: 36
Abstract:
With semiconductor properties similar to crystalline phase beta-FeSi2 and higher absorption coefficients, the semiconducting amorphous Fe-Si films are potential materials for large-area electronics. In this paper, magnetron sputtering method was used to prepare FexSi100-x (x=0~69.7at. %) amorphous films on Si (100) and Al2O3 (0001) substrates. The analyses of the optical band gap, resistivity, initial crystallization temperature and crystalline phase showed regional variations of properties in the film. Furthermore, [cluster](glue atom)1or3 amorphous structural model was used to study the local structures of the films. It was found that there were three short-range ordered cluster structures including [Si-Si4], [Fe-Si7Fe6] and [Fe-Si8Fe2], which were respectively determined by Si, ŠĆ-FeSi and beta-FeSi2 phases in the entire composition range. These three local structures, alone or superimposed, were divided into three main regions. The results confirmed that the characteristic short-range order of crystalline phase ultimately determined the semiconductor properties of amorphous Fe-Si films, and verified the validity of amorphous structural model based on clusters for analyzing amorphous FexSi100-x. These studies are of practical significance to expand the applications of amorphous FexSi100-x films with semiconductor properties.