2016-Sustainable Industrial Processing Summit
SIPS 2016 Volume 2: Dubois Intl. Symp. / Complex Metallic Systems
| Editors: | Kongoli F, Kobe S, Calin M, Dong C |
| Publisher: | Flogen Star OUTREACH |
| Publication Year: | 2016 |
| Pages: | 130 pages |
| ISBN: | 978-1-987820-38-6 |
| ISSN: | 2291-1227 (Metals and Materials Processing in a Clean Environment Series) |
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Barrierless Cu alloy Thin Films on Silicon with High Thermal Stability and Low Electrical Resistivity
Xiaona Li1;1DALIAN UNIVERSITY OF TECHNOLOGY, Dalian, China;
Type of Paper: Regular
Id Paper: 198
Topic: 36
Abstract:
We demonstrate thin film Cu-Ni-M alloys deposited directly on silicon, without a designated barrier, showing very high thermal stability at the temperature up to 700¡æ for 1h. Here M is an element insoluble with Cu but soluble with Ni. Thin [M-Ni12]Cux films were sputter deposited, annealed and their materials and electrical properties were studied. The results can be explained by the ¡°cluster-plus-glue atom¡± model for stable solid solutions, where [M-Ni12] cuboctahedral clusters are embedded in a Cu matrix. In this model, the clusters are congruent with the Cu minimizing atomic interactions allowing a good stability. The properties of the films were found to be affected by the M/Ni ratios. Especially, the (M1/13-Ni12/13)0.3Cu99.7 film had the lowest electrical resistivity below 3¦I¦¸•cm. And even after 40h annealing at 500¡æ they maintained a low resistivity still below 3 ¦I¦¸•cm, demonstrating extremely high stabilities against silicide formation.