2015-Sustainable Industrial Processing Summit
SIPS 2015 Volume 9: Physics, Advanced Materials, Multifunctional Materials
| Editors: | Kongoli F, Dubois JM, Gaudry E, Fournee V, Marquis F |
| Publisher: | Flogen Star OUTREACH |
| Publication Year: | 2015 |
| Pages: | 275 pages |
| ISBN: | 978-1-987820-32-4 |
| ISSN: | 2291-1227 (Metals and Materials Processing in a Clean Environment Series) |
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Internal Friction Spectra and Microhardness of Non-Doped Monocrystalline Si1-XGex (X<0,02) Substrates
Ia Kurashvili1; Avtandil Sichinava1; Guram Bokuchava1; Giorgi Darsavelidze1;1, Tbilisi, Georgia;
Type of Paper: Regular
Id Paper: 320
Topic: 21
Abstract:
Monocrystalline Si-Ge alloys are characterized by the improved electrophysical characteristics, radiation resistance and fracture strength. These circumstances stipulate high perspectives for their photovoltaic and optoelectronic applications. An investigation of structural-sensitive mechanical properties of monocrystalline Si-Ge substrates with various Ge concentration is important for the solution of deliberate control of their structural and physical characteristics.
The present work deals with the investigation of internal friction and shear modulus temperature spectra and microhardness of non-doped monocrystalline Si1-xGex(x<0,02) substrates. Samples surfaces with (111) crystallographic orientation have been prepared by standard mechanical and chemical polishing methods. Decrease of activation energy of relaxation processes and nonmonotonic changes of shear modulus have been revealed in 0,5-5,0Hz oscillation frequency and 20-750 C temperature ranges. Investigation of microhardness and elastic modulus by Vickers indentation method were performed on Shimadzu device. It is shown that with increasing concentration of germanium microhardness the elasticity modulus decreases. Observed changes are discussed from the point of view of interaction of various dislocations with point defects and their complexes in a real structure of Si-Ge substrates.
Keywords:
Materials; Photovoltaics;References:
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