2015-Sustainable Industrial Processing Summit
SIPS 2015 Volume 1: Aifantis Intl. Symp. / Multiscale Material Mechanics
| Editors: | Kongoli F, Bordas S, Estrin Y |
| Publisher: | Flogen Star OUTREACH |
| Publication Year: | 2015 |
| Pages: | 300 pages |
| ISBN: | 978-1-987820-24-9 |
| ISSN: | 2291-1227 (Metals and Materials Processing in a Clean Environment Series) |
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Mechanics Meets Electronics in Nanoscale
Roman Nowak1;1NORDIC HYSITRON LABORATORY, AALTO UNIVERSITY, Espoo, Finland;
Type of Paper: Plenary
Id Paper: 337
Topic: 1
Abstract:
Our discovery of the electric current spike (ECS) that emerges during nanodeformation of semiconductors, was first highlighted in the Letters to Nature Nanotechnology (Nowak et al. Vol.4 /2009/; Chrobak, Nowak, et al. Vol.6 /2011/) and offers an enhanced understanding of the link between nanoscale mechanical deformation and electrical properties. Our conclusions point to key advances in pressure-sensing, pressure-switching and unique phase-change applications in next-generation electronics. It is a very encouraging demonstration of the way in which nanomechanics contribute to electronics and optoelectronics developments.
The onset of plasticity is traditionally understood in terms of dislocation nucleation and motion. The extensive study of nanoscale deformation has proven that initial displacement transient events occurring in metals are the direct result of dislocation nucleation in stressed nanovolumes. Our research, however, shows that this is not always true. Instead of dislocation activity, nanoscale deformation may simply be due to transition from one crystal structure to another, as predicted for GaAs by our earlier atomistic calculations. The presented results lead to a major shift in our understanding of the elastic-plastic transition as well as inherent formation of a Schottky barrier in semiconductors under localized high pressures. The results showing the dramatic impact of crystal imperfections on the functional properties of GaAs motivated our further study into the onset of incipient plasticity in Si nanoparticles. Molecular Dynamics calculations and supporting experimental results reveal that the onset of plasticity in Si nano-orbs with <130 nm diameter is governed by dislocation-driven mechanisms, in striking contrast to bulk Si where incipient plasticity is dominated by phase transformations. We established the previously unforeseen role of "nanoscale confinement" governing a transition in mechanical response from "bulk" to "nanovolume" behavior, shedding new light on the dilemma concerning origin of incipient plasticity in nanoscale volumes of semiconductors, debated extensively up to present.