2014-Sustainable Industrial Processing Summit
SIPS 2014 Volume 5: Composite, Ceramic, Quasi-crystals, Nanomaterials & Coatings
| Editors: | Kongoli F |
| Publisher: | Flogen Star OUTREACH |
| Publication Year: | 2014 |
| Pages: | 578 pages |
| ISBN: | 978-1-987820-07-2 |
| ISSN: | 2291-1227 (Metals and Materials Processing in a Clean Environment Series) |
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Synthesis and Characterization of CdS0.9Se0.1 Nanoparticles Prepared by Chemical Method for Used as Thermoelectric Materials
Thapanee Sarakonsri1;1CHIANG MAI UNIVERSITY, Maung, Thailand;
Type of Paper: Regular
Id Paper: 230
Topic: 14
Abstract:
This project studied the appropriated conditions for a synthesis of N-type CdS0.9Se0.1 semiconductor to be used as thermoelectric materials. Cd (CH3COO) 2.2H2O, Thiourea and SeO2 as precursors and ethylene glycol as a solvent. Two methods were applied to prepare CdS0.9Se0.1.
The first method was a solution method which was applied to prepare selenium powder. NaBH4 was used as a reducing agent with 8 hours reduction time. And the other method was a reflux method, which was used to prepare CdS powder, with 8 hours reaction time and 250 degree Celsius reaction temperature. The product powders were mixed together by the atomic ratio of Cd: S: Se to 1: 0.9: 0.1. Then, it was annealed with different temperatures at 500, 700, and 900 degree Celsius under nitrogen atmosphere and vary annealing time for 5 and 10 hours. Finally, all of the powder products were characterized by X-ray diffraction technique (XRD) while CaRine3.1 program for XRD pattern simulation and 3D lattice simulation, Scanning electron microscopy (SEM) with the analysis of Energy dispersive spectroscopy (EDS) for surface composition and Transmission electron microscopy (TEM).
From the XRD result of the product powders, powder annealed at 700 degree Celsius under nitrogen atmosphere for 10 hours along with the TEM result of indexing single crystal diffraction pattern can confirm that the powder product is CdS0.9Se0.1.